| PART |
Description |
Maker |
| FDS5351 |
60V N-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel 6.1 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel PowerTrench㈢ MOSFET 60V, 6.1A, 35mヘ
N-Channel PowerTrench? MOSFET 60V, 6.1A, 35mΩ
|
Fairchild Semiconductor, Corp.
|
| FDB035AN06A0 FDB035AN06A0NL |
N-Channel PowerTrench MOSFET 60V/ 80A/ 3.5m
N-Channel PowerTrench MOSFET 60V, 80A, 3.5mз
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 0.0035 Ohms @ VGS = 10V, TO-263/D2PAK Package
N-Channel PowerTrench MOSFET 60V, 80A, 3.5mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDB10AN06A0 FDP10AN06A0 |
CAP 0.1UF 50V 5% X7R SMD-1206 TR-7-PA SN100
N-Channel PowerTrench MOSFET 60V/ 75A/ 10.5m
N-Channel PowerTrench MOSFET 60V, 75A, 10.5mз
N-Channel PowerTrench MOSFET 60V, 75A, 10.5mOhm
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FQT13N06L FQT13N06LTF FQT13N06LL99Z |
60V LOGIC N-Channel MOSFET
60V N-Channel Logic level QFET
60V LOGIC N-Channel MOSFET 2800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| FQB50N06L FQI50N06L FQB50N06 FQI50N06 FQI50N06LTU |
60V LOGIC N-Channel MOSFET 52.4 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
60V N-Channel Logic level QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STP45NF06 |
N-CHANNEL 60V - 0.022ohm - 38A TO-220 STripFETPOWER MOSFET N沟道60V 0.022ohm - 38A条，220 STripFET⑩功率MOSFET
N-CHANNEL 60V - 0.022ohm - 38A TO-220 STripFET⑩ POWER MOSFET
N-CHANNEL 60V - 0.022ohm - 38A TO-220 STripFET POWER MOSFET
N-CHANNEL 60V 0.022 OHM 38A TO-220 STRIPFET POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 30A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五（巴西）直| 30A条（丁）|的SOT - 186
|
Renesas Electronics, Corp.
NXP Semiconductors N.V.
|
| FDD14AN06LA0 |
N-Channel PowerTrench MOSFET 60V, 50A, 14.6mohm
N-Channel Power Trench #174 MOSFET, 60V, 50A, 14mOhms
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| FDP025N06 |
N-Channel PowerTrench? MOSFET 60V, 265A, 2.5mΩ
N-Channel PowerTrench㈢ MOSFET 60V, 265A, 2.5mヘ
|
http://
Fairchild Semiconductor
|
| IRFP048 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)
|
International Rectifier
Power MOSFET
|
| IRFP044 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)
|
International Rectifier
Power MOSFET
|
| IRFZ44E IRFZ44EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)
|
IRF[International Rectifier]
|
