| PART |
Description |
Maker |
| SUD50P06-15L |
P-Channel, Tj = 175 °C power MOSFET; low leakage current; P通道，Tj=175℃，低漏电流
P-Channel 60-V (D-S), 175C MOSFET
P-Channel 60-V (D-S) 175C MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| FDG1024NZ |
Dual N-Channel PowerTrench? MOSFET 20 V, 1.2 A, 175 mΩ
Dual N-Channel PowerTrench垄莽 MOSFET 20 V, 1.2 A, 175 m楼?
|
Fairchild Semiconductor
|
| 2SK3503 2SK3503-T1 2SK3503-T2 |
N Channel enhancement MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| SUD30N03-30 |
N-Channel 30-V (D-S), 175 DegreeCelcious MOSFET
N-Channel Enhancement-Mode Trans
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| UPA652TT UPA652TT-E1 UPA652TT-E2 |
P-channel enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1874B UPA1874BGR-9JG UPA1874BGR-9JG-E1 UPA1874B |
N-channel enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC]
|
| UPA1809 UPA1809GR-9JG UPA1809GR-9JG-E1 UPA1809GR-9 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N沟道MOS场效应晶体管开
N Channel enhancement MOS FET
|
NEC, Corp.
NEC Corp.
|
| UPA620TT UPA620TT-E1 UPA620TT-E2 |
N-channel enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| NTF3055L175T1 NTF3055L175T1G |
Power MOSFET 2 Amps, 60 Volts, Logic Level N Channel SOT-223; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 2 A, 60 V, 0.175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET 2.0 A, 60 V, Logic Level 2 A, 60 V, 0.175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
|
ON Semiconductor
|
