| PART |
Description |
Maker |
| TSM085P03CV |
Low gate charge for fast power switching
|
Taiwan Semiconductor Co...
|
| SI4410DY |
RDS(ON) 0.0135 VGS=10V Low gate charge. Fast switching speed.
|
TY Semiconductor Co., Ltd
|
| AP2344GN-HF AP2344GN-HF14 |
Capable of 1.8V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
|
| STL28NF3LL |
N-CHANNEL 30V - 0.0055ohm - 28A PowerFLATLOW GATE CHARGE STripFETMOSFET
N-CHANNEL 30V - 0.0055ohm - 28A PowerFLAT LOW GATE CHARGE STripFET MOSFET
N-CHANNEL 30V - 0.0055ohm - 28A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| STB90NF03L STB90NF03LT4 |
N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.0056ohm - 90A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 30V - 0.0056ohm - 90A D2PAK LOW GATE CHARGE STripFET POWER MOSFET
Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:68uF; Capacitance
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| STL35NF10 |
N-CHANNEL 100V 0.025 OHM 35A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFET
N-CHANNEL 100V - 0.025ohm - 35A PowerFLAT LOW GATE CHARGE STripFET MOSFET
N-CHANNEL 100V - 0.025ohm - 35A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IRF54003 IRF540 |
N-CHANNEL 100V - 0.055 OHM - 22A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET
N-CHANNEL 100V - 0.055ヘ - 22A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
N-CHANNEL 100V - 0.055Ω - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
|
ST Microelectronics
STMicroelectronics
|
| AP2605GY0-HF AP2605GY0-HF14 |
Fast Switching Characteristic, Lower Gate Charge
|
Advanced Power Electronics Corp.
|
| IXFH52N30Q IXFK52N30Q IXFT52N30Q |
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
From old datasheet system
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
