| PART |
Description |
Maker |
| RJK0236DPA |
Built in SBD N Channel Power MOS FET
|
Renesas
|
| RJK0381DPA RJK0381DPA-00-J5A RJK0381DPA13 |
Built in SBD N Channel Power MOS High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03E5DPA-00-J5A RJK03E5DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0213DPA-00-J5A RJK0213DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N2DPA |
30V, 40A, 4.0m max Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| MCH5811 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| PT2390 PT2390-S |
Echo IC with Built in Michrophone Amplifier and Output Mixer
Echo IC with Built-in Microphone Amplifier & Output Mixer
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3711Z with Lead Free Packaging
|
Princeton Technology Co...
Princeton Technology Corporation
PTC
|
| SF15SC4 |
Schottky Rectifiers (SBD) / Center Tap, Common Cathode (Three Terminal Type)
SCHOTTKY RECTIFIER (SBD)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| MCH5809 |
Nch SBD
N-Channel Silicon MOSFET DC / DC Converter Applications
|
Sanyo Semicon Device
|
| SLA4041 |
3 A, 200 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN Darlington With built-in flywheel diode
|
Sanken electric
|
