PART |
Description |
Maker |
TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING Pch enhancement-type MOS FET
|
NEC[NEC]
|
UPA602T PA602T G11249EJ1V0DS00 UPA602T-A |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-CHANNEL MOS FET 6-PIN 2 CIRCUITS MOS Field Effect Transistor From old datasheet system
|
NEC Corp.
|
TPCF8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
KU035N06P-15 |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
KUS086N10D |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
KUS220N10D |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
KU024N06P |
N-ch Trench MOS FET
|
KEC
|
KU086N10F KU086N10P |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
KU034N08P |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
2SK3576 2SK3576-T1B 2SK3576-T2B |
N Channel enhancement MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
|