| PART |
Description |
Maker |
| PHB65N06LT |
TrenchMOS transistor Logic level FET 63 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| BUK7618-55/T3 |
57 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP SEMICONDUCTORS
|
| APM1104PGC-TRG |
90 A, 100 V, 0.018 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB GREEN PACKAGE-3
|
Anpec Electronics, Corp.
ANPEC ELECTRONICS CORP
|
| IRF3710ZSPBF IRF3710ZPBF |
59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Advanced Process Technology
|
International Rectifier
|
| BUZ100-E3045 BUZ100-E3044 BUZ100-E3046 |
60 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET TO-220AB, 3 PIN
60 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 4 PIN
60 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
|
Infineon Technologies AG
SIEMENS AG
SIEMENS A G
|
| MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 250 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| IRHMJ58160 IRHMJ53160 IRHMJ54160 IRHMJ57160 |
35 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
|
IRF[International Rectifier]
|
| STS8DNH3LL |
DUAL N-CHANNEL 30V - 0.018 OHM - 8A SO-8 LOW GATE CHARGE STripFET III POWER MOSFET 双N沟道30V 0.018欧姆- 8A条的SO - 8低栅极电荷STripFET第三功率MOSFET
|
STMicroelectronics N.V.
|
| MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| AP55T10GS-HF AP55T10GS-HF14 |
54 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
ADVANCED POWER ELECTRONICS CORP
Advanced Power Electronics Corp.
|
| IRFL9014 IRFL9014PBF |
TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN, FET General Purpose Power
TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power
|
Vishay Siliconix
|
| MTD20N06HDL ON2483 |
TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
|
|
