| PART |
Description |
Maker |
| CVE7800-12-290-001 |
mm WAVE BAND, 25 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
|
SKYWORKS SOLUTIONS INC
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| MA40414M |
GALLIUM ARSENIDE, KA BAND, MIXER DIODE
|
|
| DGSK40-025A |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
|
IXYS, Corp.
|
| AH214-F54 AH222-CHIP2 AH236-CHIP2 AH225-00 AH239-7 |
VHF-KA BAND, 1.4 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 0.5 pF, 15 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 2.8 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 2.2 pF, 15 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 6.9 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 9.42 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 5.72 pF, 15 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 2.2 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
|
| DGSS10-06CC |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE
|
IXYS, Corp.
|
| ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| DGSK32-018CS DGS15-018CS |
Gallium Arsenide Schottky Rectifier Second generation
Gallium Arsenide Schottky Rectifier Second generation 24 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| DGS20-022A DGSK40-025A DGS20-025A DGSK40-022A |
250V gallium arsenide schottky rectifier
220V gallium arsenide schottky rectifier
|
IXYS[IXYS Corporation]
|
| WP710A10ID5V |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| GN01022 |
Gallium Arsenide Devices
|
Panasonic
|
|
