| PART |
Description |
Maker |
| ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| DC1282G DC1282H |
12 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
|
|
| ATF-46171 |
2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| ATF10100 |
0.5-12 GHz Low Noise Gallium Arsenide FET(0.5-12 GHz 低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
| ATF-25170 |
0.5-10 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ATF-26836-STR |
2-16 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard...
|
| ATF13284 |
1-16 Ghz Low Noise Gallium Arsenide FET
|
Agilent Technologies
|
| ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136 |
ER 3C 3#16 PIN RECP BOX
0.5-12 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT
Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
| GENE-8315 TF-GENE-8315-A10-01 TF-GENE-8315-A10-02 |
Onboard Intel? ULV Celeron? M 600 MHz/ 1.0 GHz or Intel? Celeron? M 1.3 GHz (Optional)/ 1.5 GHz Processors
|
AAEON Technology
|
