PART |
Description |
Maker |
AIKW50N65DF5 |
High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode
|
Infineon Technologies A...
|
AIGW50N65F5 |
High speed fast IGBT in TRENCHSTOPTM 5 technology
|
Infineon Technologies A...
|
AIGW50N65H5 |
High speed fast IGBT in TRENCHSTOPTM 5 technology
|
Infineon Technologies A...
|
APT100GF60LR APT100GF60B2R |
Fast IGBT 600V 100A The Fast IGBT is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
APT33GF120HR |
Fast IGBT 1200V 38A The Fast IGBT is a new generation of high voltage power IGBTs
|
Advanced Power Technology Ltd.
|
MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor Mitsubishi Electric Semiconductor Toshiba Corporation
|
MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
SGF23N60UFD SGF23N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 23 A, 600 V, N-CHANNEL IGBT Ultra-Fast IGBT Discrete, High Performance IGBT
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
3BH41 3GH41 EE08669 |
Silicon diffused type fast recovery diode for high speed rectifier applications FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) From old datasheet system HIGH SPEED RECTIFIER APPLICATION (FAST RECOVERY)
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
IXGM25N100A IXGP12N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE IGBT 20 A, 1000 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
APT33GF120B2RD APT33GF120LRD |
Fast IGBT & FRED 1200V 52A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|