| PART |
Description |
Maker |
| M24256-B MM24256-BBN5T MM24256-BBN6T MM24256-BDL5T |
32K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO14
256/128 Kbit Serial I C Bus EEPROM With Three Chip Enable Lines 一百二十八分之二百五十六千位串行总线EEPROM，带有集成电路芯片启用三
HDWR ASSY ROD 2-4 MODULES SER 3
HDWR ASSY ROD 1 MODULES SER 3
HDWR NUT FASTENER SER 3 ROD ASSY
TOOL HAND NUT DRIVER FOR SER 3
256/128 Kbit Serial I2C Bus EEPROM With Three Chip Enable Lines
256/128 Kbit Serial I?C Bus EEPROM With Three Chip Enable Lines
256/128 Kbit Serial IC Bus EEPROM Without Chip Enable Lines
|
STMicroelectronics N.V.
EEPROM
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
|
| MC14562B MC14562BCL MC14562BD ON0934 MC14562BCP |
128-Bit Static Shift Register 4000/14000/40000 SERIES, 128-BIT RIGHT SERIAL IN SERIAL OUT SHIFT REGISTER, TRUE OUTPUT, CDIP14
128-Bit Static Shift Register 128位静态移位寄存器
128-Bit Static Shift Register 4000/14000/40000 SERIES, 128-BIT RIGHT SERIAL IN SERIAL OUT SHIFT REGISTER, TRUE OUTPUT, PDIP14
ORDERING INFORMATION
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| K9F1208D0B-Y K9F1208U0B-Y K9F1208Q0B-F K9F1208Q0B- |
64M x 8 Bit NAND Flash Memory 6400 × 8位NAND闪存
TV 128C 128#22D SKT RECP
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; No. of Contacts:128; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| AMD29F010B AM29F010B AMD29F010B-120EC AMD29F010B-1 |
From old datasheet system
1 Mbit (128 K x 8-Bit)
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
|
AMD[Advanced Micro Devices]
AMD Inc
|
| IDT72V8981 IDT72V8981DB IDT72V8981J IDT72V8981J8 7 |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology
IDT
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| KM416RD8ACD-RK70 KM416RD8ACD-RK80 KM418RD8ACD-RK70 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 128/144Mbit RDRAM56 × 16/18位2 * 16属银行直接RDRAMTM
24.9K 1% 1/4W -200 TO 500 PPM/C MF 128/144Mbit RDRAM56 × 16/18位2 * 16属银行直接RDRAMTM
BACKSHELL
CLAMP
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 29PL256N S29PL129N70GAW003 S29PL256N65GFWW03 |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
|
Spansion Inc.
Spansion, Inc.
|
| BAS70-04T-7 BAS70-05T-7 BAS70-06T-7 BAS70T-7 BAS70 |
SURFACE MOUNT SCHOTTKY BARRIER DIODE 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE
128 x 128 pixel format, LED or EL Backlight available 表面贴装肖特基二极管
CSCA-A Series Hall-effect based, open-loop current sensor, Gallant connector, 200 A rms nominal, ±600 A range
|
http://
DIODES[Diodes Incorporated]
Diodes Inc.
Diodes, Inc.
|
| LTC1421-2.5CG LTC1421-2.5CSW |
14-bit, 5V, 200KSPS, 4-Channel Unipolar ADC 20-SOIC 0 to 70
14-Bit 200KSPS ADC Ser. Out, Auto PWRDN, Single Ended Input 8-SOIC -40 to 85 热插拔控制器
|
Linear Technology Corporation
Linear Technology, Corp.
|
| UPD488448FB-C71-45-DQ1 UPD488448FB-C60-53-DQ1 UPD4 |
128 M-bit Direct Rambus??DRAM
128 M-bit Direct RambusDRAM
128 M-bit Direct Rambus?/a> DRAM
128 M-bit Direct Rambus DRAM
|
NEC Corp.
|
