| PART |
Description |
Maker |
| RJK0204DPA-00-J5A RJK0204DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03P0DPA RJK03P0DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FMXB-2102 |
Fast Recovery Diode with built-in SBD for temperature detection
|
Sanken electric
|
| SCH2080KE |
N-channel SiC power MOSFET co-packaged with SiC-SBD
|
Rohm
|
| PU61C56 |
Power Transistor Array (F-MOS FETs) - Silicon N-Channel Power F-MOS (with built-in zener diode)
|
Panasonic
|
| M1FH3 |
Schottky Rectifiers (SBD) / Single (Surface Mount)
SCHOTTKY RECIFIERS (SBD)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| STA406 STA406A |
NPN Darlington With built-in avalanche diode 6 A, 70 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
|
SANKEN[Sanken electric]
|
| SLA4041 |
3 A, 200 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN Darlington With built-in flywheel diode
|
Sanken electric
|
| TDA7563 E-TDA7563 |
46 W, 4 CHANNEL, AUDIO AMPLIFIER, PZFM27
MULTIFUNCTION QUAD POWER AMPLIFIER WITH BUILT-IN DIAGNOSTICS FEATURES
|
STMICROELECTRONICS
意法半导
ST Microelectronics
|
