PART |
Description |
Maker |
HM5118165LJ-5 HM5118165LJ-7 HM5118165TT-7 HM511816 |
16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh 1M X 16 EDO DRAM, 50 ns, PDSO44 1M X 16 EDO DRAM, 60 ns, PDSO44
|
Hitachi,Ltd.
|
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168 16M x 64 Bit DRAM Module unbuffered 16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112 |
DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Hitachi Semiconductor
|
HYB3164165ATL-60 HYB3164165ATL-50 HYB3164165ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power 4M x 16 Bit 8k EDO DRAM 4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
MSM54V16258SL-45TS-K MSM54V16258SL-40TS-K |
256K X 16 EDO DRAM, 45 ns, PDSO40 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP-44/40 256K X 16 EDO DRAM, 40 ns, PDSO40 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP-44/40
|
Oki Electric Industry Co., Ltd.
|
IBM0117805MT3-70 IBM0117805T3-6R IBM0117805BT3-70 |
x8 EDO Page Mode DRAM 2M*8 11/10 EDO DRAM 20081/ 10动态随机存取存储器
|
IBM Microeletronics International Business Machines, Corp.
|
Q67100-Q3017 HM364035 HYM364035GS-60 HYM364035S HY |
4M x 36 Bit EDO DRAM Module with Parity From old datasheet system 4M x 36-Bit EDO-DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
AS4C4M4E1Q AS4CM4E1Q-50 AS4CM4E1Q-60 AS4CM4EOQ AS4 |
Thick Film Chip Resistor - RMC 1 3.9 5% R 4米4的CMOS QuadCAS的DRAM(江户)家庭 4M X 4 CMOS Quad CAS DRAM (EDO) family 4M x 4 CMOS QuadCAS DRAM (EDO) family
|
Analog Devices, Inc. ALSC[Alliance Semiconductor Corporation]
|
AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS |
5V 1M×16 CMOS DRAM (EDO) x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Alliance Semiconductor Corporation Integrated Silicon Solution, Inc. Lattice Semiconductor, Corp.
|
HY5118164CSLTC-60 HY5116164CJC-80 |
1M X 16 EDO DRAM, 60 ns, PDSO44 1M X 16 EDO DRAM, 80 ns, PDSO42
|
HYNIX SEMICONDUCTOR INC
|