| PART |
Description |
Maker |
| H5PS1G63EFR H5PS1G43EFR H5PS1G83EFR H5PS1G43EFR-E3 |
1Gb DDR2 SDRAM
256M X 4 DDR DRAM, PBGA60
128M X 8 DDR DRAM, PBGA60
|
http://
HYNIX SEMICONDUCTOR INC
|
| HY5DU281622ETP-25 HY5DU281622ETP-26 HY5DU281622ETP |
128M(8Mx16) gDDR SDRAM
8M X 16 DDR DRAM, 0.6 ns, PDSO66
8M X 16 DDR DRAM, 0.55 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| HYMP125P72CP4-C4 HYMP125P72CP4-S5 HYMP125P72CP4-S6 |
240pin Registered DDR2 SDRAM DIMMs
256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240
512M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
256M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240
|
Hynix Semiconductor, Inc.
|
| HMP564F7FFP8C-C4 HMP564F7FFP8C-S5 HMP564F7FFP8C-S6 |
240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb F-ver.
256M X 72 DDR DRAM, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM, DMA240 ROHS COMPLIANT, DIMM-240
64M X 72 DDR DRAM, DMA240 ROHS COMPLIANT, DIMM-240
|
http://
Hynix Semiconductor, Inc.
|
| NT5DS128M4BT-6K |
128M X 4 DDR DRAM, 0.7 ns, PDSO66
|
NANYA TECHNOLOGY CORP
|
| IS46DR16128-3DBLA2 IS43DR16128-3DBI |
128M X 16 DDR DRAM, 0.45 ns, PBGA84
|
INTEGRATED SILICON SOLUTION INC
|
| V58C2512404SBI6I |
128M X 4 DDR DRAM, 0.7 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|
| NT1GT72U4PB0BV-25D |
128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
|
NANYA TECHNOLOGY CORP
|
| HYMP512U64CP8-S6 |
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA240
|
HYNIX SEMICONDUCTOR INC
|
| EBD11ED8ABFA-7A |
128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
ELPIDA MEMORY INC
|
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
|
