PART |
Description |
Maker |
MSM511002A-10ZS |
1M X 1 STATIC COLUMN DRAM, 100 ns, PZIP19
|
OKI ELECTRIC INDUSTRY CO LTD
|
LH64258Z-10 |
x4 Static Column Mode DRAM
|
|
UPD4217412V-60 UPD4216412V-60 UPD4216412LE-60 UPD4 |
x4 Static Column Mode DRAM x4静态列模式DRAM
|
Advanced Interconnections, Corp.
|
H55S1222EFP-60E H55S1222EFP-60M H55S1222EFP-75E H5 |
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O 4M X 32 STATIC COLUMN DRAM, 5.4 ns, PBGA90
|
HYNIX SEMICONDUCTOR INC
|
HM511002AZP-7 HM511002AZP-6 HM511002AZP-12 HM51100 |
Compliant to MIL standard, Ribbon cable connectors; HRS No: 610-0192-0 71; Contact Mating Area Plating: Gold x1 Static Column Mode DRAM x1静态列模式DRAM
|
Infineon Technologies AG
|
M5M44258-10 M5M44258-7 M5M44258-8 M5M44258BP M5M44 |
STATIC COLUMN MODE 1048576-BIT (262144-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Semiconductor
|
UPD424800G5-10-7JD UPD424800G5-10-7KD UPD424800V-8 |
256K (32K x 8) Static RAM 8K x 8 Static RAM RoboClock® High-speed Multi-phase PLL Clock Buffer x8 Fast Page Mode DRAM x8快速页面模式的DRAM
|
NEC TOKIN, Corp.
|
MT8VDDT3232UG-75XX MT8VDDT12832UY-75XX MT8VDDT6432 |
32M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 DIMM-100 128M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 LEAD FREE, DIMM-100 64M X 32 DDR DRAM MODULE, 0.75 ns, DMA100
|
Lattice Semiconductor, Corp.
|
UPD4265400G7-A50 UPD4265400G7-A60 UPD4265400G7-A70 |
x4 Fast Page Mode DRAM x4快速页面模式的DRAM 128K x 8 Static RAM x4FastPageModeDRAM
|
|
HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M x 72 Bit ECC DRAM Module unbuffered 4M x 64 Bit DRAM Module unbuffered 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组 GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|