| PART |
Description |
Maker |
| DGS9-03AS DGS10-03A |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| DSEP30-06A DGS19-025AS DGSK40-025A DGSK40-025AS DG |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
HiPerFRED Epitaxial Diode with soft recovery
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| WP7113ID5V13 |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| MRFG35010ANT1 |
Gallium Arsenide PHEMT
|
Freescale Semiconductor, Inc
|
| GN01015 |
Gallium Arsenide Devices
|
Panasonic
|
| GN01032N |
Gallium Arsenide Devices
|
Panasonic
|
| 3SK0184 |
Gallium Arsenide Devices
|
Panasonic
|
| GN01064B |
Gallium Arsenide Devices
|
Panasonic
|
| GN01061B |
Gallium Arsenide Devices
|
Panasonic
|
| GN04073N |
Gallium Arsenide Devices
|
Panasonic
|
| GN01025 |
Gallium Arsenide Devices
|
Panasonic
|
|
