| PART |
Description |
Maker |
| HMP351U6AFR8C-S6 HMP351U6AFR8C-S5 HMP351U7AFR8C-S5 |
512M X 64 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, UBDIMM-240
240pin DDR2 SDRAM Unbuffered DIMMs based on 2Gb A version
512M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| W3EG2256M72ASSR202AJD3SG W3EG2256M72ASSR202BJD3SG |
512M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
512M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
WHITE ELECTRONIC DESIGNS CORP
|
| HMT351R7CFR4C-H9 HMT325R7CFR8C-H9 |
512M X 72 DDR DRAM, DMA240
256M X 72 DDR DRAM MODULE, DMA240
|
HYNIX SEMICONDUCTOR INC
|
| HYS72T256023 HYS72T512022HR-3.7-A |
240-Pin Registered DDR2 SDRAM Modules 512M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
|
Qimonda AG
|
| EDE2104AASE-6E-E |
512M X 4 DDR DRAM, PBGA68
|
ELPIDA MEMORY INC
|
| H5TQ2G43BMR-H9C |
512M X 4 DDR DRAM, PBGA78
|
HYNIX SEMICONDUCTOR INC
|
| MT8VDDT3232UG-75XX MT8VDDT12832UY-75XX MT8VDDT6432 |
32M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 DIMM-100
128M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 LEAD FREE, DIMM-100
64M X 32 DDR DRAM MODULE, 0.75 ns, DMA100
|
Lattice Semiconductor, Corp.
|
| EDE5132BABG-6G-F |
512M bits DDR2 SDRAM
16M X 32 DDR DRAM, 0.45 ns, PBGA128
|
ELPIDA MEMORY INC
|
| HYMD18M725AL6-K HYMD18M725AL6-H HYMD18M725A6-H HYM |
SDRAM|DDR|8MX72|CMOS|DIMM|200PIN|PLASTIC
8M X 72 DDR DRAM MODULE, 0.75 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
8M X 72 DDR DRAM MODULE, 0.8 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
