PART |
Description |
Maker |
MAFR-000087-US1C1T |
Single Junction Drop-In Circulator 2110 MHz-2170 MHz
|
M/A-COM Technology Solutions, Inc.
|
NE1101-00 |
2110 MHz - 2170 MHz RF/MICROWAVE ISOLATOR
|
Rakon France SAS
|
MAPLST2122-060CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
|
Tyco Electronics
|
PTFB211803EL PTFB211803FL |
Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
PTFA212401E PTFA212401F |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
PA1223 |
2110-2170 MHz. 5 Watt 28v. GaAs Ultra Linear Power Amplifier
|
MACOM[Tyco Electronics]
|
PTFA212002E |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz
|
Infineon Technologies AG
|
PTFA211801E PTFA211801E11 |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz
|
Infineon Technologies AG
|
MRF6S21050L |
The MRF6S21050L is designed for W鈥揅DMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA,
|
MOTOROLA
|
PXFC211507SCV1R250XTMA1 |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ?2170 MHz
|
Infineon Technologies A...
|
HP8-17E FP8-17E |
1700 MHz - 2110 MHz PARABOLIC ANTENNA, 30.3 dBi GAIN 1700 MHz - 2110 MHz PARABOLIC ANTENNA, 30 dBi GAIN
|
CommScope, Inc.
|