| PART |
Description |
Maker |
| 40TR12B |
SENSOR / ULTRASONIC / 40KHZ / TRAN
|
Jameco
|
| MJ16018 MJW16018 ON1986 |
Power 10A 800V NPN
From old datasheet system
NPN Silicon Power Transistors
POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AE
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Mobility Holdings, Inc.
|
| SK100DAL100D SK100DB100D |
NPN POWER DARLUNGTON MODULES 100A 1000V 100 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN Power Darlington Modules
|
Semikron International
|
| MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
| ASIS50-28 |
NPN SILICON RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
HF BAND, Si, NPN, RF POWER TRANSISTOR
|
ASI[Advanced Semiconductor]
Advanced Semiconductor, Inc.
ADVANCED SEMICONDUCTOR INC
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
| BUB323ZT4G BUB323Z_05 BUB323Z BUB323ZG BUB323ZT4 B |
NPN Silicon Power Darlington High Voltage Autoprotected D2PAK for Surface Mount 10 A, 350 V, NPN, Si, POWER TRANSISTOR
|
ONSEMI[ON Semiconductor]
|
| 2SD1480 |
Silicon NPN triple diffusion planar type(For power amplification) 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220F
|
Panasonic, Corp.
|
| 2SD946 2SD946A 2SD946AQ 2SD946AR 2SD950 2SD951 2SD |
Si NPN triple diffused junction mesa . Line-operated horizontal deflection output.
SI NPN EPITAXIAL PLANAR DARLINGTON 1 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126
|
PANASONIC[Panasonic Semiconductor]
Panasonic, Corp.
|
| MJE13002 MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE.
NPN EPITAXIAL SILICON POWER TRANSISTORS
|
Continental Device India Limited
|
| MJE5742 MJE5740 MJE5740-D |
Power 8A 400V Darlington NPN
Power 8A 300V Darlington NPN
NPN Silicon Power Darlington Transistors
|
ON Semiconductor
|
