PART |
Description |
Maker |
K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163L |
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC 4米16 × 4银行4BOC移动SDRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4M56163PE-RG K4M56163PE-R K4M56163PE-F90 K4M56163 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54
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Samsung Semiconductor Co., Ltd. Omron Electronics, LLC SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
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K4S510832M K4S510832M-TC_TL1H K4S510832M-TC_TL1L K |
16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet 16M x 8bit x 4 Banks Synchronous DRAM LVTTL 1,600 × 8位4银行同步DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MT48G16M16LFBG-10IT MT48G16M16LFBG-75 MT48G16M16LF |
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 14 MM, LEAD FREE, VFBGA-54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 8 X 14 MM, LEAD FREE, VFBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 11 X 8 MM, LEAD FREE, VFBGA-54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 8 X 14 MM, VFBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54 0.400 INCH, PLASTIC, TSOP2-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 11 X 8 MM, VFBGA-54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 14 MM, VFBGA-54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, PLASTIC, TSOP2-54
|
PCA Electronics, Inc.
|
K4S561632J-UC_L50 K4S561632J-UC_L75 K4S561632J-UC_ |
256Mb J-die SDRAM Specification 16M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Samsung semiconductor
|
KM48S16030A KM48S16030AT-G_F10 KM48S16030AT-G_FA K |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
|
Electronic Theatre Controls, Inc. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG Infineon Technologies AG
|
IS42SM32160C-75BLI IS42SM32160C-75BL-TR IS42SM3216 |
16M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 512Mb Mobile Synchronous DRAM
|
天津新技术产业园区管理委员会 INTEGRATED SILICON SOLUTION INC Integrated Silicon Solu...
|
W9825G6JH-6 |
16M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
|
WINBOND ELECTRONICS CORP
|
IS42S32160C-6BL |
16M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
|
INTEGRATED SILICON SOLUTION INC
|
IS42VM16160D-8BLI IS42VM16160D-8BLI-TR IS42VM16160 |
16M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
|
天津新技术产业园区管理委员会 INTEGRATED SILICON SOLUTION INC
|
MT48LC16M32L2F5-10 |
16M X 32 SYNCHRONOUS DRAM, PBGA90
|
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