PART |
Description |
Maker |
MT46V32M8P-75ZATF MT46V16M16CV-5BK MT46V64M4 MT46V |
32M X 8 DDR DRAM, 0.75 ns, PDSO66 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 16M X 16 DDR DRAM, 0.7 ns, PBGA60 Double Data Rate (DDR) SDRAM
|
Micron Technology
|
HYB25D128160ATL-7 HYB25D128400ATL-6 HYB25D128400AT |
8M X 16 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66 32M X 4 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 32M X 4 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66 16M X 8 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66 16M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 8M X 16 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66 8M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 32M X 4 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66 128 Mbit Double Data Rate SDRAM 128兆双倍数据速率SDRAM
|
Infineon Technologies AG
|
HYB25D256160BF-7 HYB25D256160BEL-7F |
16M X 16 DDR DRAM, 0.75 ns, PBGA60 16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
INFINEON TECHNOLOGIES AG
|
KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61 16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYMD2166466 HYMD216646L6 HYMD2166466-H |
16Mx64|2.5V|K/H/L|x4|DDR SDRAM - Unbuffered DIMM 128MB 16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
HY5DU561622ELTP-JI |
16M X 16 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
IS43DR16160A-37CBL |
16M X 16 DDR DRAM, 0.5 ns, PBGA84
|
INTEGRATED SILICON SOLUTION INC
|
HY5DU28822LT-K |
16M X 8 DDR DRAM, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
THLD12N11B70 THLD12N11B75 |
16M X 64 DDR DRAM MODULE, 7 ns, DMA200 16M X 64 DDR DRAM MODULE, 7.5 ns, DMA200
|
|
EM6AA160TSA EM6AA160TSA-4G EM6AA160TSA-5G |
16M x 16 bit DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
HY5RS123235FP-2 HY5RS123235FP-16 HY5RS123235FP-11 |
16M X 32 DDR DRAM, 0.25 ns, PBGA136 12 X 14 MM, LEAD FREE, FBGA-136
|
Hynix Semiconductor, Inc.
|
|