| PART |
Description |
Maker |
| BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
Vishay Telefunken
|
| BF1206F |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| BF1102 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF998WR |
N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| BF994S BF994 |
N-channel dual-gate MOS-FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BF1109 BF1109R BF1109WR |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
| BF989 |
N-channel dual-gate MOS-FET
|
NXP Semiconductors
Vishay Siliconix
Philips Semiconductors
|
| BF1105WR BF1105 BF1105R |
CONNECTOR
N-channel dual-gate MOS-FETs
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BF981 |
SILICON N-CHANNEL DUAL GATE MOS-FET
|
NXP Semiconductors
|
| 3SK295 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
| 3SK298 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
| BF982 |
SILICON N-CHANNEL DUAL GATE MOS-FET
|
ETC
|
