| PART |
Description |
Maker |
| MG50Q2YS9 MG100M2CK1 MG200H2CK1 GT60M103 MG400H1FK |
50 A, 1200 V, N-CHANNEL IGBT
100 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
200 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
400 A, 600 V, N-CHANNEL IGBT
|
|
| MCRF355 MCRF360 |
The MCRF355 is a uniquely designed read-only passive Radio Frequency Identification (RFID) IC device with advanced anticollision features optimized at 13.56 MHz. The device is powered remotely by rectifying RF magnetic fields that are tran
The MCRF360 is a uniquely designed read-only passive Radio Frequency Identification (RFID) IC device with advanced anticollision features operating at 13.56 MHz. The device is powered remotely by rectifying RF magnetic fields that are tran
|
Microchip
|
| UPA1428 UPA1428A UPA1428AH UPA1428AH-AZ |
NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
2 A, 70 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC Corp.
|
| 2SK1308H 2SD1317TX |
5 A, 400 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
4 A, 25 V, NPN, Si, POWER TRANSISTOR
|
Panasonic, Corp.
PANASONIC CORP
|
| QM300HA-24 |
300 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| QM30TB-24B |
30 A, 6 CHANNEL, NPN, Si, POWER TRANSISTOR
122 x 32 pixel format, Compact LCD size
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| ULN2062M |
1.5 A, 80 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
|
VISHAY SPRAGUE
|
| B4420 |
4 A, 60 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
|
PANASONIC CORP
|
| PMP4201G PMP4201V PMP4201Y PMP4201Y115 |
NPN/NPN matched double transistors; Package: SOT363 (SC-88); Container: Tape reel smd 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
|
