| PART |
Description |
Maker |
| HM51258P HM51258P-10 HM51258P-12 HM51258P-15 HM512 |
262,144-word x 1-bit Static Column CMOS Dynamic RAM
262144 word x 1 Bit Static Column CMOS DRAM
|
Hitachi Semiconductor
|
| HM514402BZ-7 HM514402BS-7 HM514402BLS-7 |
x4 Static Column Mode DRAM x4静态列模式DRAM
|
EPCOS AG
|
| V53C102AK70 V53C102AK70L V53C102AK10 V53C102AK10L |
x1 Static Column Mode DRAM x1静态列模式DRAM
|
ON Semiconductor
|
| AK491024GP-12 AK491024GK-12 AK491024GK-80 AK491024 |
x(8 1) Page Mode DRAM Module
× 1）静态列模式DRAM模块
× 1）页面模式内存模
x(8 1) Static Column Mode DRAM Module ×8 1）静态列模式DRAM模块
|
Molex, Inc.
|
| MT48LC16M16A2FG-7EITD MT48LC16M16A2P-75ITDTR |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 8 X 14 MM, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
|
Micron Technology, Inc.
|
| HYB3165405BT-40 HYB3164405BT-40 HYB3164405BJ-40 HY |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 40 ns, PDSO32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
|
http://
Infineon Technologies AG
SIEMENS AG
|
| TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
4M X 4 OTHER DRAM, 70 ns, PDSO26
16M X 1 EDO DRAM, 60 ns, PDSO24
4M X 4 OTHER DRAM, 50 ns, PDSO26
16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
| K4M56163PE-RG K4M56163PE-R K4M56163PE-F90 K4M56163 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54
|
Samsung Semiconductor Co., Ltd.
Omron Electronics, LLC
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYB31645400ATL HYB3165400AJ-40 HYB3164400AJ-40 HYB |
16M x 4-Bit Dynamic RAM
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70
16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32
|
Siemens Semiconductor Group
SIEMENS AG
Infineon Technologies AG
|
| V54C3256164VDUF6I V54C3256404VDUT7I V54C3256164VDU |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
PROMOS TECHNOLOGIES INC
|
|
