PART |
Description |
Maker |
K4S51323PF-MF90 K4S51323PF-MF75 K4S51323PF-MF1L K4 |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 LEAD FREE, FBGA-90 16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 FBGA-90 4M x 32Bit x 4 Banks Mobile-SDRAM From old datasheet system
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc INTEGRATED SILICON SOLUTION INC
|
HYB39L256160AC-7.5 HYB39L256160AT-7.5 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256 MBit Synchronous Low-Power DRAM
|
Infineon Technologies AG
|
THMY641661BEG-100 |
16M Word x 64 Bit Synchronous DRAM Module(16Mx 64位同步动态RAM模块) 16M Word x 64 Bit Synchronous DRAM Module(16M瀛?x 64浣??姝ュ???AM妯″?)
|
Toshiba Corporation
|
AS4SD16M72PBG-10_ET AS4SD16M72PBG-10_IT AS4SD16M72 |
16M x 72, SDR SDRAM MCP 16M X 72 SYNCHRONOUS DRAM, PBGA219 PLASTIC, PBGA-219
|
http:// Austin Semiconductor, Inc Micross Components
|
K4S510832M K4S510832M-TC_TL1H K4S510832M-TC_TL1L K |
16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet 16M x 8bit x 4 Banks Synchronous DRAM LVTTL 1,600 × 8位4银行同步DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MB8516SR72CA-103LDG MB8516SR72CA-102DG MB8516SR72C |
16M x 72Bit Synchronous DRAM DIMM 16M X 72 BIT SYNCHRONOUS DYNAMIC RAM DIMM
|
Fujitsu Component Limited. Fujitsu Limited
|
KM48S16030A KM48S16030AT-G_F10 KM48S16030AT-G_FA K |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
|
Electronic Theatre Controls, Inc. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HYB25L256160AC-7.5 HYB25L256160AF-7.5 |
16M X 16 SYNCHRONOUS DRAM, 7.5 ns, PBGA54 12 X 8 MM, PLASTIC, TFBGA-54 16M X 16 SYNCHRONOUS DRAM, 7.5 ns, PBGA54 12 X 8 MM, GREEN, PLASTIC, TFBGA-54
|
Infineon Technologies AG
|
HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
UPD4516161 |
16M Bit Synchronous DRAM
|
NEC
|
HYB39S256160T-8B |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
SIEMENS A G
|