| PART |
Description |
Maker |
| TL2105PIS SIE501.2LT SIE501.5LT SIE501.8LT SIE502. |
SIP/SIE 500 NON-ISOLATED SERIES
MB 41C 27#20 14#16 SKT RECP
Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3122; No. of Contacts:5; Connector Shell Size:14; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
MB 41C 27#20 14#16 PIN RECP 高级督察/女士500 NON-ISOLAT ED系列
SIP/SIE 500 NON-ISOLATED SERIES 高级督察/女士500 NON-ISOLAT ED系列
Industrial Test Leads, Probes & Clips
Input voltage range:4.5-5.5V, output voltage 1.2V,(6A) non-isolated step-down DC/DC converter
Input voltage range:4.5-5.5V, output voltage 2.1V,(6A) non-isolated step-down DC/DC converter
|
http://
POWER-ONE[Power-One]
Omron Electronics, LLC
|
| IXBH12N300 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3067 |
High Voltage Monolithic IC
|
Renesas Technology
|
| ECN3067 ECN3067SLV ECN3067SLR |
HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| ECN3063 ECN3063SPR ECN3063SPV ECN3063SP |
HIGH-VOLTAGE MONOLITHIC IC 高压单片集成电路
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| ECN2112 |
(ECN2102 / ECN2112) HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
| TPD4113K |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4113K07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4105K |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| LT3587EUDPBF LT3587EUDTRPBF |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
| LT3587 LT3587EUD-PBF LT3587EUD-TRPBF |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
