| PART |
Description |
Maker |
| CY7C1515AV18-200BZXI CY7C1526AV18-278BZXC CY7C1526 |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165
8M X 9 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| K7R643682M07 K7R640982M K7R643682M-FI160 K7R643682 |
2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM
2M X 36 QDR SRAM, 0.5 ns, PBGA165
2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
| CY7C1315CV18-200BZC CY7C1315CV18-250BZC |
18-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V 512K X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| K7R161884B K7R161884B-FC16 K7R161884B-FC20 K7R1618 |
512Kx36 & 1Mx18 QDR II b4 SRAM 512Kx36
512Kx36 & 1Mx18 QDR II b4 SRAM
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IDT71P74104S167BQ IDT71P74804S250BQ IDT71P74604S20 |
18Mb Pipelined QDR II SRAM Burst of 4 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDR II SRAM Burst of 4 1M X 18 QDR SRAM, 0.45 ns, PBGA165
18Mb Pipelined QDR II SRAM Burst of 4 512K X 36 QDR SRAM, 0.45 ns, PBGA165
18Mb Pipelined QDR II SRAM Burst of 4 2M X 8 QDR SRAM, 0.5 ns, PBGA165
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| CY7C1310CV18-167BZXC CY7C1314CV18-167BZI CY7C1314C |
18-Mbit QDR-IISRAM 2-Word Burst Architecture 2M X 8 QDR SRAM, 0.5 ns, PBGA165
18-Mbit QDR-IISRAM 2-Word Burst Architecture 512K X 36 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit QDRTMII SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| BBS-15 BBS-1/4 BBS-2/10 BBS-1-8/10 BBS-10 BBS-1-6/ |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
72-Mbit DDR-II SRAM 2-Word Burst Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
Fuse
256K (32K x 8) Static RAM
64/256/512/1K/2K/4K x 18 Synchronous FIFOs
Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs
Neuron® Chip Network Processor
64-Kbit (8K x 8) Static RAM
72-Mbit QDR™-II SRAM 2-Word Burst Architecture 保险
|
NXP Semiconductors N.V.
|
| CY7C1412V18-200BZCES CY7C1414V18-200BZCES CY7C1410 |
36-Mbit QDR-II SRAM 2-Word Burst Architecture
36-Mbit QDR-II™ SRAM 2-Word Burst Architecture
36-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
