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IRFB52N15D - 60 A, 150 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRFB52N15D_6762121.PDF Datasheet

 
Part No. IRFB52N15D
Description 60 A, 150 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 138.09K  /  12 Page  

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Part: IRFB52N15D
Maker: IR
Pack: TO-220
Stock: Reserved
Unit price for :
    50: $0.98
  100: $0.93
1000: $0.88

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 Full text search : 60 A, 150 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
 Product Description search : 60 A, 150 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB


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Motorola Mobility Holdings, Inc.
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RFT3055 RFT3055LE HGTG20N120CND FN4537 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的,0.150 Ohm的N通道,逻辑层次,额定静电,功率MOSFET
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From old datasheet system
Fairchild Semiconductor, Corp.
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From old datasheet system
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N-CHANNEL 60V - 0.032 OHM - 24A DPAK STRIPFET II POWER MOSFET
ST Microelectronics
STMicroelectronics
MTD6N15 MTD6N15T4G Power Field Effect Transistor DPAK for Surface Mount(功率场效应晶体管) 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Power MOSFET 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
ON Semiconductor
UTD405L-TN3-T UTD405L-TN3-R UTD405-TN3-T UTD405-TN 18 A, 30 V, 0.032 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 LEAD FREE PACKAGE-3
P-CHANNEL ENHANCEMENT MODE
Unisonic Technologies Co., Ltd.
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Hamamatsu Photonics
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FP00021K74F9251CJ FP00023K74F9251EK FP00022K74F925 RESISTOR, METAL FILM, 2 W, 1 %, 150 ppm, 3740 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, METAL FILM, 2 W, 1 %, 150 ppm, 2740 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
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S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
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3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
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MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
Spansion Inc.
Spansion, Inc.
SPANSION LLC
19019-0052 19019-0037 19019-0057 19019-0049 19019- .250X.032 FEM.QD AVIKRIMP (P-8142) 4.2 mm2, BRASS, TIN FINISH, PUSH-ON TERMINAL
CONN .250 FEMALE INSUL 10-12AWG 6 mm2, BRASS, TIN FINISH, PUSH-ON TERMINAL
.250X.032 FEM.QD AVIK./REEL (PZ-8142) 4.2 mm2, BRASS, TIN FINISH, PUSH-ON TERMINAL
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190190054 4.2 mm2, BRASS, TIN FINISH, PUSH-ON TERMINAL
.187X.020 FEM.QD AVIK. TAPED (BB-8138T) 2.5 mm2, BRASS, TIN FINISH, PUSH-ON TERMINAL
.205 X .032 FEM.QD AVIKRIMP (BB-8191-032 2.5 mm2, BRASS, TIN FINISH, PUSH-ON TERMINAL
CONN .187 FEMALE INSUL 14-16AWG 2.5 mm2, BRASS, TIN FINISH, PUSH-ON TERMINAL
.250X.032 FEM.QD AVIK. TAPED (C-8143T)
Molex, Inc.
MOLEX INC
 
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