| PART |
Description |
Maker |
| M27W512 M27W512-100B6TR M27W512-100F6TR M27W512-10 |
4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27C512 |
512 KBIT (64KB X8) UV EPROM AND OTP EPROM
|
ST Microelectronics
|
| M29F100B |
NND - 1 MBIT (128KB X 8 OR 64KB X 16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
|
SGS Thomson Microelectronics
|
| M27W512-100B6E M27W512-100F6 M27W512-100K6 M27W512 |
512 KBIT (64KB X8) LOW VOLTAGE OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM 512千位4K的8）低压紫外线EPROM和检察官办公室存储器
Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SO 0 to 70 512千位4K的8）低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| SST29EE512-70-4I-EH SST29LE512-70-4I-EH SST29VE512 |
512 Kbit (64K x 8) page-mode EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 3V, 200 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 5V, 70 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 3V PROM, 150 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式的EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| AT24C04C-SSHM-T AT24C08C-SSHM-T AT24C08C-SSHM-B AT |
I2C-Compatible, (2-wire) Serial EEPROM 4-Kbit (512 x 8), 8-Kbit (1024 x 8)
|
ATMEL Corporation
|
| M25P05-AV M25P05-A M25P05-AVMP6T M25P05-AVMN6T M25 |
512 KBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 25 MHZ SPI BUS INTERFACE
512 KBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 25 MHZ SPI BUS INTERFACE
512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M27C512-10 M27C512-12F1 M27C512-12F1E M27C512-12F1 |
CAP 620PF 200V 1% NP0(C0G) RAD.20 T&R R-MIL-PRF-20 STANDOFF
1-To-4 Address Register/Driver With 3-State Outputs 80-TSSOP -40 to 85 512千位4K的8）紫外线存储器和OTP存储
SERVSWITCH USB COAX CPU CABLES, WITH AUDIO 50FT 512千位64Kb的x8紫外线存储器和OTP存储
512 Kbit (64K x8) UV EPROM and OTP EPROM 512千位4K的8）紫外线存储器和OTP存储
512 Kbit 64Kb x8 UV EPROM and OTP EPROM 512千位64Kb的x8紫外线存储器和OTP存储
SMM310; Package: HG-MMA-4; Acoustic Sensitivity: -42.0 dBV/Pa; Signal to Noise: 59.0 dB(A); V<sub>DD</sub> (min): 1.5 V; V<sub>DD</sub> (max): 3.3 V; Distortion Treshold: 110.0 dBSPL; 512千位64Kb的x8紫外线存储器和OTP存储
CAP 39PF 200V 5% NP0(C0G) AXIAL T&R R-MIL-PRF-20
CAP 33PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
Fuses, 100mA 250V SB 5X15 BULK
CAP 3.3PF 100V /-0.25PF NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 2700PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 3300PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 33PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 2200PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 220PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 220PF 50V 2% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 330PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 330PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 24PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
20-Bit Buffer/Driver With 3-State Outputs 56-SSOP -40 to 85
CAP 100UF 63V ALUM ELECT, 20% LOW ESR SMD, 10X10.2
CAP 220PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 8200UF 450V ELECT SCREW TERM
GLASS TUBE FOR DS80 IRON PKG/4
SERV SWITCH USB COAX CPU CABLES 50 FT
SERV SWITCH USB COAX CPU CABLES 35 FT
512 KBIT (64KB X8) UV EPROM AND OTP EPROM
64K X 8 OTPROM, 200 ns, PDIP28
64K X 8 OTPROM, 100 ns, PDSO28
64K X 8 OTPROM, 150 ns, PQCC32
64K X 8 OTPROM, 120 ns, PDIP28
64K X 8 OTPROM, 120 ns, PQCC32
64K X 8 OTPROM, 200 ns, PQCC32
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M93C46-DS3G_S M93C46-DS3G_W M93C46-DS3P_S M93C46-D |
256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
512 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8
1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIREserial access EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE? serial access EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE庐 serial access EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE垄莽 serial access EEPROM
|
意法半导
STMicroelectronics
|
| UL1242N UL1242 |
Ukad wzmacniacza p.cz.
UL1242N
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
|
List of Unclassifed Manufacturers
Ultra CEMI
ETC
|
| UL1401 |
Wzmacniacz mocy m.cz.
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
|
Ultra CEMI
|
| UL1201 |
Wzmacniacz p.cz.
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
|
Ultra CEMI
|
