PART |
Description |
Maker |
CM75DU-12H |
Dual IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
VIO50-06P1 VII50-06P1 VDI50-06P1 VID50-06P1 |
CONN/6 POS HDR SHRD SGL RA LK 42.5 A, 600 V, N-CHANNEL IGBT IGBT Modules in ECO-PAC 2 42.5 A, 600 V, N-CHANNEL IGBT
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IRF710 FN2310 |
2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N娌??澧?己?????OS?烘?搴??) From old datasheet system 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
HARRIS SEMICONDUCTOR Intersil Corporation
|
IRFR9120 IRFU9120 FN3987 |
5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) P Channel Power MOSFET From old datasheet system
|
INTERSIL[Intersil Corporation]
|
CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
MGP11N60ED_D ON1850 MGP11N60ED ON1849 |
IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS From old datasheet system SHORT CIRCUIT RATED LOW ON-VOLTAGE 15 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
ON Semiconductor
|
PPHR70L60A |
Insulated Gate Bipolar Transistor; Package: TO-254; VCE(sat) (V): 1.6; t(on) (nsec): 115; IC (A): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; BV(CES) (V): 600; VGE(th) (V): 3 70 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
STI30NM60N STW30NM60N STF30NM60N STP30NM60N STB30N |
25 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC N-channel 600 V, 0.1 ヘ, 25 A, MDmesh⑩ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK N-channel 600 V, 0.1 楼?, 25 A, MDmesh垄芒 II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK N-channel 600 V, 0.1 Ω, 25 A, MDmesh II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK N-channel 600 V, 0.1 Ω, 25 A, MDmesh?/a> II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
|
STMicroelectronics
|
STGW30NC60W STGB30NC60WT4 |
60 A, 600 V, N-CHANNEL IGBT, TO-247AC 30 A - 600 V - ultra fast IGBT
|
STMicroelectronics
|
MTP1N60E |
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc. Motorola, Inc
|
|