| PART |
Description |
Maker |
| ND24106L BSS129 ND2406L ND2410L 70198 |
N-Channel Depletion-Mode MOSFET Transistor(??ぇ婕??瀵奸??甸?0惟锛?す???娴?.15A??娌????敖??OSFET?朵?绠?
N-Channel Depletion-Mode MOSFET Transistor(最大漏源导通电0Ω，夹断电.15A的N沟道耗尽型MOSFET晶体 N沟道耗尽型MOSFET晶体管（最大漏源导通电0Ω，夹断电.15A的N沟道耗尽型MOSFET的晶体管
From old datasheet system
N-Channel Depletion-Mode MOSFET Transistors
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
| RUP15010-1014 |
GaN-SiC Broadband Amplifier
|
RFHIC
|
| RUP15020-10-14 |
GaN-SiC Broadband Amplifier
|
RFHIC
|
| RUP15100-10 |
GaN-SiC Broadband Amplifier
|
RFHIC
|
| RUP15050-10-14 |
GaN-SiC Broadband Amplifier
|
RFHIC
|
| TGF2023-2-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-02-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-02 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-10 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| MAGX-001090-600L00 MAGX-001090-SB0PPR |
GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-000912-250L00 MAGX-000912-SB1PPR |
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
