PART |
Description |
Maker |
IDT71V65602S-100BQI IDT71V65802S-100BQI IDT71V6580 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K × 3612K采样× 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 36 ZBT SRAM, 4.2 ns, PBGA165 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 512K X 18 ZBT SRAM, 4.2 ns, PBGA119 3.3V 256K X 36 ZBT Synchronous 2.5V I/O PipeLined SRAM 3.3V 512K x 18 ZBT Synchronous 2.5V I/O PipeLined SRAM
|
Integrated Device Techn... Integrated Device Technology, Inc. IDT
|
CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的(256 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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CY7C1370C-167AC CY7C1370C-167BGC CY7C1370C-167BGI |
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture 512K X 36 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 2.6 ns, PQFP100
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
MT55V1MV18FF-12 MT55V512V36FT-12 MT55V512V36FF-12 |
1M X 18 ZBT SRAM, 9 ns, PBGA165 512K X 36 ZBT SRAM, 9 ns, PQFP100 512K X 36 ZBT SRAM, 9 ns, PBGA165
|
CYPRESS SEMICONDUCTOR CORP
|
IDT71V65603 IDT71V65803S150PFI IDT71V65803S150BQI |
256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs 256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs 256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs From old datasheet system 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs
|
IDT[Integrated Device Technology]
|
CY7C1354B-166AC CY7C1354B-166AI CY7C1354B-166BZC C |
9-Mb (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 3.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 2.8 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
MCM64Z916ZP100R MCM64Z834ZP100R |
512K X 18 ZBT SRAM, 5 ns, PBGA119 256K X 36 ZBT SRAM, 5 ns, PBGA119
|
MOTOROLA INC
|
CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
MT55L512Y36P MT55L512Y32P MT55L1MY18P |
16Mb: 512K x 36,Flow-Through ZBT SRAM(16Mb流通式同步静态存储器) 16Mb: 512K x 32,Flow-Through ZBT SRAM(16Mb流通式同步静态存储器) 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
|
Micron Technology, Inc.
|
CY7C1371D-133BGXCT |
512K X 36 ZBT SRAM, 6.5 ns, PBGA119
|
CYPRESS SEMICONDUCTOR CORP
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