| PART |
Description |
Maker |
| 79LV0832RPQK-20 79LV0832RT1QK-25 79LV0832RT2QK-20 |
CB 6C 6#16 SKT RECP WALL
8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 256K X 32 EEPROM 3V, 250 ns, QFP96
8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 256K X 32 EEPROM 3V, 200 ns, QFP96
|
Maxwell Technologies, Inc
|
| SST29LE020-200-4I-EH |
256K X 8 EEPROM 3V, 200 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
|
| HN58C257A HN58C256AFP10 HN58C256AP10 |
256 k EEPROM (32-kword ×8-bit)(256k EEPROM (32k×8)
IC-SM-256K CMOS EEPRM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
|
Hitachi,Ltd.
|
| ACT-E128K32C-150P7Q ACT-E128K32C-120P7Q ACT-E128K3 |
128K X 32 EEPROM 5V MODULE, 150 ns, CPGA66 CERAMIC, PGA-66
128K X 32 EEPROM 5V MODULE, 120 ns, CPGA66 CERAMIC, PGA-66
128K X 32 EEPROM 5V MODULE, 250 ns, CPGA66 CERAMIC, PGA-66
128K X 32 EEPROM 5V MODULE, 200 ns, CQMA68
128K X 32 EEPROM 5V MODULE, 250 ns, CQMA68
128K X 32 EEPROM 5V MODULE, 120 ns, CQMA68
|
Aeroflex, Inc.
|
| 28C256TRPFB-15 28C256TRT4FB-15 28C256TRT4FB-12 28C |
256K EEPROM (32K x 8-Bit) EEPROM 32K X 8 EEPROM 5V, 120 ns, DFP28
256K EEPROM (32K x 8-Bit) EEPROM 32K X 8 EEPROM 5V, 150 ns, DFP28
256K EEPROM (32K x 8-Bit) EEPROM 32K X 8 EEPROM 5V, 150 ns, DIP28
256K EEPROM (32K x 8-Bit) EEPROM 32K X 8 EEPROM 5V, 120 ns, DIP28
|
Maxwell Technologies, Inc
|
| CAT28C256NA-15T CAT28C256NA-12T CAT28C256NI-15T CA |
256K-Bit Parallel EEPROM
256 kb Parallel EEPROM 32K X 8 EEPROM 5V, 120 ns, PQCC32
|
http://
ON Semiconductor
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| SST28VF040A-90-4C-PH SST28SF040A-90-4C-PH SST28SF0 |
4 Mbit (512K x8) SuperFlash EEPROM(4 M(512K x8)超级闪存存储
RESISTOR 62 OHM .5W CARB COMP
4 Mbit (512K x8) SuperFlash EEPROM 4兆位（为512k × 8）超快闪EEPROM
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
(SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| HN58X24256FPIE HN58X24256I HN58X24256TIE HN58X2412 |
Memory>EEPROM>Serial EEPROM
Two-wire serial interface 128k EEPROM (16-kword 】 8-bit) 256k EEPROM (32-kword 】 8-bit)
|
Renesas Electronics Corporation
|
| DPS128X16A3-85M DPS128X16H3-85M DPS128X16H3-85B DP |
256K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CPGA50 CERAMIC, MODULE, SLCC, PGA-50
256K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CQFP48 GULLWING, SLCC-48
256K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CQIP48 SLCC-48
|
Twilight Technology, Inc.
|
