| PART |
Description |
Maker |
| CY7C1354CV25 CY7C1354CV25-166BGC CY7C1354CV25-166B |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL垄芒 Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| CY7C1354DV25-200BZI |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture 256K X 36 ZBT SRAM, 3.2 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1356DV25-250BZC CY7C1356DV25-250BZI CY7C1356DV |
256K X 36 ZBT SRAM, 3.2 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1328G-133AXC |
4-Mbit (256K x 18) Pipelined DCD Sync SRAM 256K X 18 CACHE SRAM, 4 ns, PQFP100
|
Cypress Semiconductor, Corp.
|
| CY7C1362C-250AXC CY7C1362C-250AXI CY7C1360C-250AXC |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM
|
CYPRESS[Cypress Semiconductor]
|
| CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
36-Mbit QDR™-II SRAM 2-Word Burst Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM
256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc.
Electronic Theatre Controls, Inc.
|
| SST29EE020-120-4C-WH SST29LE020-250-4C-U2 SST29VE0 |
7.3728MHZ CRYSTAL -40/85''C
FLUKE-741B 120 REFURBISHED BY NEWARK
KJA 79C 79#22 PIN RECP
128Kx8 EEPROM
PSoC® Mixed-Signal Array
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式EEPROM
DSUB 13X3 F PCR/A G 50OHM T 2兆位56K × 8）页模式的EEPROM
IC SMD AN2135SC CONTROLLER USB 256K X 8 EEPROM 5V, 120 ns, PDSO32
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| CY7C1362B-166AI CY7C1362B-166AC CY7C1360B-200BGC C |
CONNECTOR ACCESSORY 256K X 36 CACHE SRAM, 3.5 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PQFP100
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (S)
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (L)- (2)
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| GVT71256D36B-5 GVT71256D36T-5 GVT71256D36T-4.4 GVT |
256K x 36 pipelined SRAM, 200MHz
256K x 36 pipelined SRAM, 225MHz
256K x 36 pipelined SRAM, 150MHz
256K x 36 pipelined SRAM, 166MHz
512K x 18 pipelined SRAM, 225MHz
512K x 18 pipelined SRAM, 150MHz
512K x 18 pipelined SRAM, 166MHz
512K x 18 pipelined SRAM, 200MHz
|
Cypress
|
| E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8）启动块闪存系列
ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes
28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http://
Intel, Corp.
PROM
Intel Corp.
Intel Corporation
|
