| PART |
Description |
Maker |
| SF18 SF12-AP SF12-BP SF14-AP SF16-AP |
1.0 Amp Super Fast Recovery Rectifiers 50 to 600 Volts
1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components
|
| BAY8012 BAY80-TAP |
Small Signal Switching Diode, High Voltage
DIODE 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
|
Vishay Siliconix
Vishay Semiconductors
|
| ZHCS1006TA ZHCS500TA ZHCS750TA UZHCS500TA UZHCS500 |
DIODE SCHOTTKY 60V 1.0A SOT-23 0.9 A, SILICON, SIGNAL DIODE
DIODE SCHOTTKY 40V 0.5A SOT-23 0.5 A, SILICON, SIGNAL DIODE
0.75 A, SILICON, SIGNAL DIODE MINIATURE PACKAGE-3
0.4 A, SILICON, SIGNAL DIODE
|
Zetex Semiconductor PLC
ZETEX PLC
DIODES INC
|
| 1N4003-A 1N4004-A 1N4003-T 1N4002L-T 1N4006L-T 1N4 |
1.0A RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
1.0A RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1.0A RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE
1.0A RECTIFIER 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc.
Diodes, Inc.
|
| RTD12 BCD25 BCD35 |
0.1 A, 12000 V, SILICON, SIGNAL DIODE
0.1 A, 25000 V, SILICON, SIGNAL DIODE
0.1 A, 35000 V, SILICON, SIGNAL DIODE
|
|
| BYM05-100 BYM05-600 BYM05-400 |
0.5 A, 100 V, SILICON, SIGNAL DIODE
0.5 A, 600 V, SILICON, SIGNAL DIODE
0.5 A, 400 V, SILICON, SIGNAL DIODE
|
Vishay Intertechnology, Inc.
Vishay Beyschlag
|
| UF1003-A UF1002-A UF1007-A UF1007-B UF1001-A UF100 |
1.0A ULTRA-FAST RECTIFIER 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc.
Diodes, Inc.
|
| 1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| JAN1N6809UEG2 JAN1N6807UEG2 JANTX1N6810UEG2 |
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214BA, PLASTIC, DO-214BA, 2 PIN, Signal Diode
DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214BA, PLASTIC, DO-214BA, 2 PIN, Signal Diode
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, PLASTIC, DO-214BA, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
| EGF1T-HE3 |
DIODE 1 A, 1300 V, SILICON, SIGNAL DIODE, DO-214BA, LEAD FREE, PLASTIC, GF1, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
|
