| PART |
Description |
Maker |
| SUM110P06-08L-E3 |
110 A, 60 V, 0.008 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB ROHS COMPLIANT, TO-263, 3 PIN
110 A, 60 V, 0.008 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB TO-263, 3 PIN
|
Vishay Intertechnology, Inc.
|
| STS12NH3LL |
N-CHANNEL 30V - 0.008 Ohm - 12A SO-8 ULTRA LOW GATE CHARGE STripFET™ MOSFET
N-CHANNEL 30 V - 0.008 ?- 12 A SO-8 ULTRA LOW GATE CHARGE STripFET MOSFET
N-CHANNEL PowerMESH MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET⑩ MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFETMOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| PHB125N06T-T |
75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP SEMICONDUCTORS
|
| IRF3305 |
75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
|
| HUF75344S3S HUF75344G3 HUF75344P3 |
75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FS100SMJ-03 |
100 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
HIGH-SPEED SWITCHING USE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NP82N04PDG-E2-AY |
82 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB TO-263, MP-25ZP, 3 PIN
|
NEC, Corp.
|
| STS11NF3LL |
N-CHANNEL 30V - 0.008 OHM - 11A SO-8 LOW GATE CHARGE STRIPFET POWER MOSFET
|
ST Microelectronics
|
| IRL2505SPBF IRL2505STRRPBF IRL2505SPBF-15 |
104 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
ADVANCED PROCESS TECHNOLOGY
|
International Rectifier
|
| SUP85N08-08-E3 |
85 A, 75 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
|
Vishay Intertechnology, Inc.
VISHAY SILICONIX
|
| DAD104M00104S00/AA-14 DAD104M0S104S0S-14 |
104-104 CONTACT(S), PANEL MOUNT, MALE-FEMALE, RECTANGULAR ADAPTER
|
POSITRONIC INDUSTRIES INC
|
|
