| PART |
Description |
Maker |
| TC59SM816BFT-70 TC59SM808BFT-75 TC59SM808BFTL-75 T |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
|
| V54C3256164VDLF7PC V54C3256404VDLF7PC V54C3256804V |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
ProMOS Technologies, Inc.
PROMOS TECHNOLOGIES INC
|
| M2V64S2DTP-6 M2V64S2DTP-7 M2V64S2DTP-8 M2V64S4DTP- |
64M Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M2V64S20BTP-8A M2V64S30BTP-8A M2V64S40BTP-8A |
64M bit Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| M2V64S40BTP-8L M2V64S30BTP-8L M2V64S40BTP-7L M2V64 |
64M bit Synchronous DRAM 6400位同步DRAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| UPD4564323 UPD4564323G5-A10-9JH UPD4564323G5-A10B- |
64M-bit Synchronous DRAM 4-bank LVTTL
64M-bit Synchronous DRAM 4-bank, LVTTL
|
NEC[NEC]
|
| HYB39S64400CT-7.5 HYB39S64800CT-7.5 HYB39S64800CTL |
64M SDRAM Component
64-MBit Synchronous DRAM
|
Infineon Technologies A...
|
| M5M4V64S30ATP-8A M5M4V64S30ATP-8L |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| MT18LSDT6472AI-133XX |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168
|
Unisonic Technologies Co., Ltd.
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| M2V64S50ETP-I |
64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range)
|
Elpida Memory
|
