| PART |
Description |
Maker |
| 5082-0810 50820810 |
SILICON STEP RECOVERY DIODE S BAND, SILICON, STEP RECOVERY DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| MF1302T-1R8 MF1501T-1R5 MF1304T-6R8 MF1303T-100 MF |
Axial Molded Choke
0.5-2.5 GHz Ultralinear Mixer w/LO Buffer
8.5 - 11 GHz 6-bit Phase Shifter
Low Noise Amp, SB
Gain Block
X-band Discrete Power pHEMT
Ku-band Discrete Power pHEMT
18mm HFET
24mm HFET
Cell-Band CDMA PA Module; 1-Bit
Cell-Band PA Module; 1-Bit
|
ECM Electronics Limited.
|
| FMPA2151 |
2.4 - 2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power
2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module (Preliminary)
|
Fairchild Semiconductor
|
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| UPC2712T UPC2712T-E3 |
2.6 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC Corp.
NEC[NEC]
|
| UPC1688G UPC1688G-T1 UPC1688G-T2 UPC1688G-T2-A |
1100 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER MINIMOLD, 4 PIN
IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,BIPOLAR,SOT-143R,4PIN,PLASTIC
5 V, 1.1 GHz WIDE BAND AND FLAT GAIN AMPLIFIER SILICON MMIC 5伏，1.1 GHz的宽频带及平坦增益放大器单片
|
NEC[NEC]
NEC Electronics Corp
NEC Corp.
NEC, Corp.
|
| LQP03TN4N7H04 LQP03TN5N1H04 AN26024A GRM33B30J104K |
Ultra small, Single Band LNA-IC for 2.4 GHz Band Applications
|
Panasonic Battery Group
|
| LD7111 LD7111SERIES |
DBS-Band, 1.7KW Klystrons for Communications
17 GHz BAND, 1.7 kW, HIGH EFICIENCY, HIGH POWER GAIN
17 GHz BAND / 1.7 kW / HIGH EFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
|
| 2SC5315 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (fT=16 GHz series)
|
TOSHIBA
|
| INA-31063 INA-31063-TR1 |
DC-2.5 GHz 3 V, High Isolation Silicon RFIC Amplifier(直流.5 GHz 3 V,高隔离硅射频集成电路放大
3V Fixed Gain. High Isolation amplifier
的DC - 2.5 GHz3伏，高隔离硅射频放大器（直流.5 GHz3伏，高隔离硅射频集成电路放大器）
0 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Agilent(Hewlett-Packard)
AGILENT TECHNOLOGIES INC
|
| MAAMML0020 |
X -> Ka Band, Connectorised Tripler: 9 - 11 GHz -> 27 - 33 GHz
X -> Ka Band, Connectorised Tripler: 9 - 11 GHz -> 27 - 33 GHz
|
MACOM[Tyco Electronics]
|
