| PART |
Description |
Maker |
| SEF112B |
1.0 A High Voltage Ultrafast Rectif
|
SeCoS Halbleitertechnologie GmbH
|
| BZX84CXXXLT1G BZX84CXXXLT3 BZX84B2V4LT1 BZX84B2V4L |
Zener Voltage Regulators 225 mW SOT-23 Surface Mount
Zener Voltage Regulators 225 mW SOT23 Surface Mount(225mW SOT-23表面安装齐纳稳压
Zener Voltage Regulators(齐纳稳压 6.2 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB
|
ONSEMI[ON Semiconductor]
|
| DS2107SV42 |
3329 A, 4200 V, SILICON, RECTIFIER DIODE
|
DYNEX SEMICONDUCTOR LTD
|
| T1989N16TOF T1989N18TOC |
4200 A, 1600 V, SCR
4200 A, 1800 V, SCR
|
|
| MA4EX600L-1225T |
Silicon Double Balanced HMIC Mixer 4200 - 6000 MHz
|
M/A-COM Technology Solutions, Inc.
|
| CMLD2004S |
SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES 0.225 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
|
| BD2004S-13 |
0.225 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
DIODES INC
|
| BZX84C2V4LT1T3 |
2.4 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
MOTOROLA INC
|
| 2N6439 |
60 W, 225 to 400 MHz CONTROLLED Q?BROADBAND RF POWER TRANSISTOR NPN SILICON
60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON
|
MOTOROLA[Motorola, Inc]
|
| M306N0FGTFP M306N0MCT |
60 W / 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON
60 W, 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON
60 W, 225 to 400 MHz CONTROLLED Q?BROADBAND RF POWER TRANSISTOR NPN SILICON
|
Tyco Electronics
|
| ZFBT-4R2G-FT_ ZFBT-4R2G-FT |
Wideband 10 to 4200 MHz
|
MINI[Mini-Circuits]
|
| BHP-250 |
High Pass Filter 50Ω 225 to 3000 MHz
High Pass Filter 50惟 225 to 3000 MHz
High Pass Filter 50ヘ 225 to 3000 MHz
|
Mini-Circuits
|
