| PART |
Description |
Maker |
| NTR2 |
UHF Narrow Band FM Transceiver
|
Radiometrix Ltd
|
| ANP1800M2-23 L735A L1300 ANP2300M12-10 |
1700 MHz - 1800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER HERMETIC SEALED, CASE S003
735 MHz - 765 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
1215 MHz - 1365 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2200 MHz - 2300 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
Sumida, Corp.
|
| AMF-4F-122128-10-12P AMF-4F-009015-04-13P AMF-2F-0 |
12200 MHz - 12800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
950 MHz - 1450 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
5800 MHz - 6500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
7250 MHz - 7750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| RDL2-433-32 RDL2 |
UHF Multi Channel Wide Band FM Transceiver
|
Radiometrix Ltd
|
| RDL212 |
UHF Multi Channel Wide Band FM Transceiver
|
Radiometrix Ltd
|
| 2SC5488A |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
Sanyo Semicon Device
|
| 2SC4245 E000921 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS
From old datasheet system
TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| MT6C03AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6L61AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| AU-1049-70-1179 AU-1049-70-N-1179 AU-1372-140-N AU |
50 MHz - 90 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
100 MHz - 180 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
30 MHz - 500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
50 MHz - 1000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
MITEQ INC
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
