PART |
Description |
Maker |
IRF130-133 IRF131 IRF132 IRF133 IRF532 IRF533 IRF5 |
N-Channel Power MOSFETs 20 A 60-100 V N-Channel Power MOSFETs/ 20 A/ 60-100 V CAP 220PF 200V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 N-Channel Power MOSFETs, 20 A, 60-100 V N沟道功率MOSFET0甲,60-100 V
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
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APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp. Advanced Power Technology
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MTB33N10E |
TMOS POWER FET 33 AMPERES 100 VOLTS 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Motorola Mobility Holdings, Inc. Motorola, Inc
|
AP18P10GH AP18P10GJ |
12 A, 100 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 12 A, 100 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
ADVANCED POWER ELECTRONICS CORP Advanced Power Electronics Corp.
|
SFF80N10Z |
55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET 55 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Solid State Devices, Inc.
|
PSMN5R0-100PS |
N-channel 100 V 5 mΩ standard level MOSFET in TO-220 120 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 60 V, 0.023 ohm, N-CHANNE 81 A, 60 V, 0.012 ohm, N-CHANNE 27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. VISHAY INTERTECHNOLOGY INC
|
MTD6P10E ON2515 MTD6P10E-T4 |
6 A, 100 V, 0.66 ohm, P-CHANNEL, Si, POWER, MOSFET TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM From old datasheet system
|
Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola, Inc]
|
H7N1004AB |
30 A, 100 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
NP100P06PDG-E2-AY NP100P06PDG-E1-AY NP100P06PDG-15 |
100 A, 60 V, 0.0078 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN SWITCHING P-CHANNEL POWER MOS FET
|
HIROSE ELECTRIC Co., Ltd. American Bright Optoelectronics, Corp. Renesas Electronics Corporation
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