PART |
Description |
Maker |
FDS3672 FDS3672NL |
N-Channel PowerTrench MOSFET 100V/ 7.5A/ 22m N-Channel PowerTrench MOSFET 100V, 7.5A, 22mз Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 7.5A, 0.022 Ohm @ Vgs = 10V, SO-8 Package
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FAIRCHILD[Fairchild Semiconductor]
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FDD3672 FDD3672NL |
N-Channel UltraFET Trench MOSFET 100V/ 44A/ 28m N-Channel UltraFET Trench MOSFET 100V, 44A, 28mз Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 44A, 0.028 Ohms @ VGS = 10V, TO-252/DPAK Package N-Channel UltraFET Trench MOSFET 100V, 44A, 28mOhm
|
FAIRCHILD[Fairchild Semiconductor]
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FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 100V的五(巴西)直| 20A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 150伏五(巴西)直| 3A条(丁)| TO - 220AB现有
|
Cooper Bussmann, Inc.
|
FQP90N10V2 FQPF90N10V2 |
100V N-Channel Advanced QFET V2 series 100V N-Channel MOSFET 90 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
HUFA75631SK8 HUFA75631SK8T |
5.5A, 100V, 0.039 Ohm, N-Channel, UltraFETPower MOSFET 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5.5A I(D) | SO
|
Fairchild Semiconductor Corporation
|
JANS2N6849 JANTXV2N6849 JANTX2N6849 2489 IRFF9130 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package HEXFET? TRANSISTORS From old datasheet system POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
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IRF[International Rectifier]
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IRFG5110 IRFG5110P IRFG5110N IRFG5110-15 |
Simple Drive Requirements 100V, Combination 2N-2P-CHANNEL -100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package 100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
IRFR120N IRFU120N IRFR IRFR120NTR IRFR120NTRL IRFR |
Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A) (IRFR120N / IRFU120N) HEXFET Power MOSFET HEXFET® Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package 9.1 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
IRF[International Rectifier]
|
FQH70N10 |
100V N-Channel Q-FET FQH70N10 100V N-Channel MOSFET FQH70N10 100V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRF9130 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.30ohm, Id=-11A)
|
International Rectifier
|
IRHQ567110 IRHQ567110P IRHQ563110 IRHQ563110N IRHQ |
100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a 28-pin LCC package 100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package 100V的双n -2P -通道MOSFET的采8引脚LCC封装 RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28) RADIATION HARDENED POWER MOSFET 100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a 28-pin LCC package
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HIROSE ELECTRIC Co., Ltd. IRF[International Rectifier]
|
IRF5N5210 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-2 package POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.060ohm, Id=-31A) POWER MOSFET P-CHANNEL(Vdss=-100V/ Rds(on)=0.060ohm/ Id=-31A)
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International Rectifier
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