PART |
Description |
Maker |
ELANSC520-100AC ELANSC520-100AI |
PLASTIC BGA, CAVITY UP(BGA)
|
ADVANCED MICRO DEVICES INC
|
HYRDU64164M-80M HYRDU72184M-80M HYRDU72184M-60M |
4M X 16 RAMBUS, PBGA66 MICRO, BGA-66 4M X 18 RAMBUS, PBGA74 MICRO, BGA-74
|
Hynix Semiconductor, Inc.
|
FDZ291P06 FDZ291P |
P-Channel 1.5 V Specified PowerTrench? BGA MOSFET P-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FDZ206P |
P-Channel 2.5V Specified PowerTrench BGA MOSFET From old datasheet system P-Channel 2.5V Specified PowerTrench® BGA MOSFET
|
Fairchild Semiconductor
|
K7P401811M-HC160 K7P403611M-HC200 K7P403611M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet 128K X 36 STANDARD SRAM, 2.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
|
Samsung Electronic
|
EWIXP465AB EWIXP455AD EWIXP455ACT EWIXP455ADT EWIX |
266 MHz, RISC PROCESSOR, PBGA544 LEAD FREE, PLASTIC, BGA-544 533 MHz, RISC PROCESSOR, PBGA544 LEAD FREE, PLASTIC, BGA-544 400 MHz, RISC PROCESSOR, PBGA544 LEAD FREE, PLASTIC, BGA-544 667 MHz, RISC PROCESSOR, PBGA544 LEAD FREE, PLASTIC, BGA-544
|
Intel, Corp. INTEL CORP
|
IDT71V67613S200BQ IDT71V67613S183BG IDT71V67613S20 |
256K X 36 CACHE SRAM, 3.1 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165 256K X 36 CACHE SRAM, 3.3 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119 256K X 36 CACHE SRAM, 3.1 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 256K X 36 CACHE SRAM, 3.3 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 256K X 36 CACHE SRAM, 3.3 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165 256K X 36 CACHE SRAM, 3.1 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
|
Integrated Device Technology, Inc.
|
FW80321M600Q467 FW80321M400Q466 |
600 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544 400 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
|
Intel, Corp.
|
CA-MLF52C-A-S-01 |
BGA Prototyping Adaptor
|
Ironwood Electronics.
|
|