| PART |
Description |
Maker |
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| GB15XP120KTPBF GB15XP120KPBF |
Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A
|
Vishay Siliconix
|
| SKA06N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT)
|
SIEMENS AG
|
| APTGT50TL60T3G |
Three level inverter Trench Field Stop IGBT Power Module
|
Microsemi Corporation
|
| APTGT100TL60T3G |
Three level inverter Trench Field Stop IGBT Power Module
|
Microsemi Corporation
|
| APTGT150TL60G |
Three level inverter Trench Field Stop IGBT Power Module
|
Microsemi Corporation
|
| IXDA20N120AS |
IGBT Discretes: NPT IGBT
High Voltage IGBT
|
IXYS
|
| FGL60N100BNTDNL |
1000V, 60A NPT-Trench IGBT 60 A, 1000 V, N-CHANNEL IGBT, TO-264AA
|
Fairchild Semiconductor, Corp.
|
| APTGF90A60T1G |
110 A, 600 V, N-CHANNEL IGBT
Phase leg NPT IGBT Power Module
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi Corporation
|
| SGB15N120 |
Fast S-IGBT in NPT-technology( NPT技术中的快S-IGBT) 快速的S -不扩散核武器条约IGBT的技术（不扩散技术中的快速第S - IGBT的）
|
SIEMENS AG
|
