| PART |
Description |
Maker |
| OM6407SD OM6406SD OM6408SD OM6405SD |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 400V五（巴西）直| 5.5AI（四）|计划生育
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 100V的五（巴西）直| 8A条（丁）|计划生育
|
Mitsubishi Electric, Corp.
|
| UPA1520B UPA1520BH |
N-CHANNEL POWER MOS FET ARRAY SWITCHING USE
From old datasheet system
TRANSISTOR,MOSFET,ARRAY,N-CHANNEL,30V V(BR)DSS,2A I(D),SIP
|
NEC[NEC]
NEC Electron Devices
NEC Corp.
|
| M54585KP |
Transistor Array
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| IRHQ6110 IRHQ63110 |
TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 3A I(D) | LLCC 晶体管| MOSFET的|阵|互补| 100V的五（巴西）直| 3A条（丁）| LLCC
RADIATION HARDENED POWER MOSFET
|
HIROSE ELECTRIC Co., Ltd.
International Rectifier
|
| BA12003B BA12003BF BA12004B BA12001B BA12003B/BF |
Standard Linear LSIs > Transistor array
High voltage high current Darlington transistor array
High voltage, high current Darlington transistor array
From old datasheet system
|
ROHM[Rohm]
|
| LB1212 LB1213 LB1216 LB1214 LB1211 LB1217 LB1215 L |
General Purpose Transistor Array
From old datasheet system
Generral-Purpose Transistor Array
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| BC807U |
General Purpose Transistors - PNP Silicon AF Transistor Array for AF input stages and drivers
PNP Silicon Transistor Array
|
INFINEON[Infineon Technologies AG]
|
| IRFP040 IRF9622 IRF9612 IRFP362 IRFP343 |
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 8.4A I(D) | TO-247AC
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 1.5A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 200伏五（巴西）直| 1.5AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 900MA I(D) | TO-220AB
TRANSISTOR|MOSFET|P-CHANNEL|200VV(BR)DSS|1.5AI(D)|TO-220AB
TRANSISTOR|MOSFET|N-CHANNEL|50VV(BR)DSS|40AI(D)|TO-247AC
|
International Rectifier, Corp.
|
| CA3096_04 CA3096 CA3096A CA3096AE CA3096AM CA3096A |
NPN/PNP Transistor Array, High Voltage, Enhanced Icbo, Iceo and Vce(sat)
NPN/PNP Transistor Array, High Voltage, General Purpose, Relaxed Parameters
NPN/PNP Transistor Arrays
50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-012AC
50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-001BB
|
INTERSIL[Intersil Corporation]
|
| MHT8P20 MTP3N12 VN2410B |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-258AA
TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 3A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | 700MA I(D) | TO-39 晶体管| MOSFET的| N沟道| 240伏五（巴西）直| 700mA的一d）| TO - 39封装
|
Microchip Technology, Inc.
|
| CA3096AE CA3096CE |
TRANSISTOR,BJT,ARRAY,INDEPENDENT,40V V(BR)CEO,50MA I(C),DIP
TRANSISTOR,BJT,ARRAY,INDEPENDENT,24V V(BR)CEO,50MA I(C),DIP
From old datasheet system
|
Intersil Corp
|
| 2SK1547 2SK947 2SK903 |
MOSFET Transistor
TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,12A I(D),TO-220AB
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,4A I(D),TO-220
|
Fuji Electric
Fuji Semiconductors, Inc.
|
