| PART |
Description |
Maker |
| ELANSC520-100AC ELANSC520-100AI |
PLASTIC BGA, CAVITY UP(BGA)
|
ADVANCED MICRO DEVICES INC
|
| FDZ4670 |
N-Channel PowerTrench?MOSFET BGA 30V, 25A, 2.5mΩ
N-Channel PowerTrench㈢MOSFET BGA 30V, 25A, 2.5mヘ
|
Fairchild Semiconductor
|
| PUMA2F16006M-90 PUMA2F16006-90 PUMA2F16006M-120E P |
32-Tap, Volatile DPP with I2C/DEC, Up/Down Interface, TSSOP
BGA, ROHS-A, IND TEMP, T&R(ARM)
BGA,GREEN,IND TEMP,T&R(ARM)
x32 Flash EEPROM Module X32号，闪存EEPROM模块
EEPROM EEPROM
|
Infineon Technologies AG
Amphenol Tuchel
|
| FDZ291P06 FDZ291P |
P-Channel 1.5 V Specified PowerTrench? BGA MOSFET
P-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDZ293P06 FDZ293P |
P-Channel 2.5 V Specified PowerTrench? BGA MOSFET
P-Channel 2.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IS71V08F64GS08-7085AI IS71V08F64GS08-7085BI |
SPECIALTY MEMORY CIRCUIT, PBGA101 11 X 12 MM, BGA-101
SPECIALTY MEMORY CIRCUIT, PBGA73 8 X 11.60 MM, BGA-73
|
Integrated Silicon Solution, Inc.
|
| IBM25PPC440GX-3FB533C IBM25PPC440GX-3CB533C IBM25P |
32-BIT, 533 MHz, RISC PROCESSOR, PBGA552 25 X 25 MM, FLIP CHIP, PLASTIC, BGA-552
32-BIT, 533 MHz, RISC PROCESSOR, CBGA552 25 X 25 MM, CERAMIC, BGA-552
32-BIT, 667 MHz, RISC PROCESSOR, CBGA552 25 X 25 MM, CERAMIC, BGA-552
|
Mitsubishi Electric, Corp.
|
| K7P401811M-HC160 K7P403611M-HC200 K7P403611M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
128K X 36 STANDARD SRAM, 2.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
|
Samsung Electronic
|
| TSC51C2XXX-12IB TSC51C2XXX-16IB TSC51C2XXX-A12IB T |
IC MAX 7000 CPLD 512 208-PQFP
IC MAX IIZ CPLD 570 LE 256-MBGA
IC MAX 7000 CPLD 512 256-FBGA
484-pin FineLine BGA RoHS Compliant: Yes
956-pin BGA RoHS Compliant: Yes
IC,FPGA,32470-CELL,CMOS,BGA,1020PIN,PLASTIC
FPGA Logic IC Logic Type:FPGA; No. of Macrocells:726; Package/Case:1020-BGA; Leaded Process Compatible:No; Number of Circuits:32;
IC,FPGA,4800-CELL,CMOS,BGA,484PIN,PLASTIC
IC,FPGA,10570-CELL,CMOS,BGA,672PIN,PLASTIC
IC,FPGA,14400-CELL,CMOS,BGA,780PIN,PLASTIC
No. of Macrocells:192; No. of Pins:68; Operating Temp. Max:85°C; Operating Temp. Min:0°C; Propagation Delay:7.5ns RoHS Compliant: Yes;
No. of Macrocells:192; No. of Pins:100; Operating Temp. Max:85°C; Operating Temp. Min:0°C; Propagation Delay:7.5ns RoHS Compliant: Yes;
No. of Macrocells:160; No. of Pins:84; Operating Temp. Max:70 C; Operating Temp. Min:0 C; Propagation Delay:10ns RoHS Compliant: Yes;
No. of Macrocells:440; No. of Pins:100; Operating Temp. Max:85°C; Operating Temp. Min:0°C; Propagation Delay:9ns RoHS Compliant: Yes;
8-BIT MICROCONTROLLER 8位微控制
IC MAX 7000 CPLD 128 100-PQFP 8位微控制
IC MAX 7000 CPLD 160 84-PLCC 8位微控制
|
TE Connectivity, Ltd.
Diodes, Inc.
Semtech, Corp.
|
| AS7C251MPFD18A-133BC AS7C251MPFD18A-133BCN |
1M X 18 STANDARD SRAM, 3.8 ns, PBGA165 BGA-165
1M X 18 STANDARD SRAM, 3.8 ns, PBGA165 LEAD FREE, BGA-165
|
Alliance Semiconductor, Corp.
|
| IDT71V67613S200BQ IDT71V67613S183BG IDT71V67613S20 |
256K X 36 CACHE SRAM, 3.1 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.3 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
256K X 36 CACHE SRAM, 3.1 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.1 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
|
Integrated Device Technology, Inc.
|
| W9864G2DB-7 |
BGA SDRAM
|
Winbond Electronics
|
|
