| PART |
Description |
Maker |
| IRF7413GTRPBF IRF7413GPBF |
Generation V Technology
Ultra Low On-Resistance
|
International Rectifier
|
| IRLML2803GPBF11 |
Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET
|
International Rectifier
|
| KRF7313 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| IRF7506PBF IRF7506 IRF7506TRPBF IRF7406PBF IRF7506 |
Generation V Technology
HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm)
ULTRA LOW ON RESISTANCE
|
IRF[International Rectifier]
|
| IRLMS6702PBF IRLMS6702TRPBF IRLMS6702PBF-15 |
Generation V Technology, Micro6 Package Style, Ultra Low RDS
2.4 A, 20 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET
|
International Rectifier
|
| IRF7303 |
Generation V Technology
|
Kersemi Electronic Co., Ltd...
|
| SH10DC40 |
Latest generation MOSFET technology
|
Teledyne Technologies I...
|
| IRLMS6702 IRLMS6702TR |
Generation V Technology
HEXFET Power MOSFET
|
International Rectifier
|
| IRF7304PBF IRF7304TRPBF |
Generation V Technology
HEXFET Power MOSFET
|
International Rectifier
|
| SGW15N120 SGP15N120 SGP15N12009 SGW15N120FKSA1 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| IRF7389 IRF7389TR |
Generation v technology
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
