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E2081606PF08127B - MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone 场效应晶体管功率放大器模块,电子GSM和DCS1800/1900三频手持电话

E2081606PF08127B_6318513.PDF Datasheet


 Full text search : MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone 场效应晶体管功率放大器模块,电子GSM和DCS1800/1900三频手持电话
 Product Description search : MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone 场效应晶体管功率放大器模块,电子GSM和DCS1800/1900三频手持电话


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From old datasheet system
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2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 -3A / -12V Bipolar transistor
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General purpose transistor (50V, 0.15A)
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Medium power transistor (60V, 2A)
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Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
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UTC
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