| PART |
Description |
Maker |
| MGW12N120 |
Insulated Gate Bipolar Transistor N-Channel Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
|
ONSEMI[ON Semiconductor]
|
| MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGY25N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| IRG4PC40FPBF IRG4PC40FPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT
|
International Rectifier
|
| AP25G45EM |
N-CHANNEL INSULATED GATE
|
Advanced Power Electronics Corp.
|
| AP25G45EM |
N-CHANNEL INSULATED GATE 450 V, N-CHANNEL IGBT
|
Advanced Power Electronics, Corp.
|
| AP25G45GEM |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electronics Corp.
|
| MSAHZ52F120A |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Microsemi Corporation
|
| MSAGZ52F120A |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|