PART |
Description |
Maker |
S4707-01 |
MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.315; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 0.107; Package: TO-3P
|
Hamamatsu Photonics
|
STI24N60M2 STW24N60M2 STB24N60M2 STP24N60M2 |
N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus?low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
|
STMicroelectronics
|
IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC 70 A, 600 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
STFI24N60M2 |
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in I2PAKFP package
|
ST Microelectronics
|
STW47NM60ND |
N-channel 600 V, 0.075 Ω typ., 35 A FDmesh II Power MOSFET (with fast diode) in a TO-247 package
|
STMicroelectronics
|
STF33N60M2 STW33N60M2 STI33N60M2 STP33N60M2 |
N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages
|
STMicroelectronics
|
STP26NM60N |
N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
|
STMicroelectronics
|
S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
|
Hamamatsu Photonics
|
S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
2N5754 2N5755 2N5756 2N5757 |
2.5-A silicon triac. Voltage(typ) 600 V. 2.5-A silicon triac. Voltage(typ) 400 V. 2.5-A silicon triac. Voltage(typ) 200 V. 2.5-A silicon triac. Voltage(typ) 100 V. 2.5-A Silicon Triacs
|
General Electric Solid State Solid State Optronic N.A.
|
STL24N60DM2 |
N-channel 600 V, 0.195 (ohm) typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package
|
STMicroelectronics
|