| PART |
Description |
Maker |
| APT1001R1BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 1.100 Ohm
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| AOWF7S65 AOW7S65 |
650V 7A a MOS TM Power Transistor
|
Alpha & Omega Semiconductors
|
| AOT7S65 |
650V 7A a MOS TM Power Transistor
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| KA5H0380 KA5X03XX03 KA5X03XX KA5H0365R KA5H0365RTU |
Fairchild Power Switch(FPS)
3A/650V 100KHz Power Switch
3A/800V 100KHz Power Switch
3A/800V 50KHz Power Switch
3A/800V 70KHz Power Switch
3A/650V 70KHz Power Switch
IC,SMPS CONTROLLER,CURRENT-MODE,BCDMOS,SIP,4PIN,PLASTIC
|
FAIRCHILD[Fairchild Semiconductor]
http://
|
| BCM94328 |
AirForce One SINGLE-CHIP IEEE 802.11a/b/g MAC/BASEBAND/RADIO WITH INTEGRATED CPU 空军一个单片IEEE 802.11a/b/g无线MAC /基频/收音机集成CPU
|
Broadcom, Corp.
|
| 2N5401 |
PNP Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| STP5NK65Z STP5NK65ZFP |
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET
JFET; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:100mA; Gate-Source Cutoff Voltage Max, Vgs(off):-9V; Continuous Drain Current, Id:100mA; Current Rating:100mA; Gate-Source Breakdown Voltage:-25V RoHS Compliant: No
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH?Power MOSFET
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| IRF9640S IRF9640STRL IRF9640SPBF IRF9640STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A)
|
IRF[International Rectifier]
|
| HUF75925D3ST HUF75925P3 HUF75831SK8 |
3A/ 150V/ 0.095 Ohm/ N-Channel/ UltraFET Power MOSFET
11A, 200V, 0.275 Ohm, N-Channel, UltraFETPower MOSFETs
11A, 200V, 0.275 Ohm, N-Channel, UltraFET Power MOSFETs
11A 200V 0.275 Ohm N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| 10-FY074PA050SM-M582F38 |
650V IGBT H5 and 650V Stealth Si diode
|
Vincotech
|
| STB11NM60FD STB11NM60FD-1 STB11NM60FDT4 STP11NM60F |
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
N-CHANNEL 600V - 0.40ohm - 11A TO-220 / TO-220FP/I2PAK FDmeshPower MOSFET with FAST DIODE N沟道600V 0.40ohm - 11A 220 / TO-220FP/I2PAK FDmesh？功率MOSFET，快速二极管
N-CHANNEL 600V - 0.40 OHM - 11A TO-220/TO-220FP/I2PAK/D2PAK FDMESH MOSFET (WITH FAST DIODE)
|
STMicroelectronics N.V.
ST Microelectronics
|
